The ancient Etesian winds are considered a blessing..
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Power ManagementOur differentiated and industry leading Bi-polar-CMOS-DMOS (BCD) power management platform offers 0.5- to 0.18-micron CMOS density and a combination of bipolar NPN and PNP devices, as well as high voltage CMOS and DMOS FETs for use in complex power management chips including driver ICs, battery and portable power management, power control for PC products, Class-D audio amplifiers, and many other consumer, communications and computing applications. Our continuously customizable LDMOS from 20V to 80V process provides design optimization and the lowest die size at any given breakdown voltage. The integration of a one to zero layer addition Non-Volatile Memory (NVM) provides significant differentiation and cost effectiveness for enhanced power management solutions. Our patented Y-Flash is the leading solution for NVM in the market today due its small cell size, zero mask adder and flexibility to implement various memory sizes. NVM blocks that utilize this proprietary technology include array sizes that are up to five times smaller than other competitive solutions and can be built using only one gate oxide allowing for ultra low cost designs. Our power management roadmap includes devices to 700V for the next generation digital lighting.
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RF CMOS BiCMOS SiGeOur commercial SiGe BiCMOS and RFCMOS technologies enable many high speed consumer applications including cellular/front end PA and Switch modules, TV tuners, and radio transceivers in cell phone, WLAN, WiMAX and GPS devices. By utilizing our RF technology, our customers acquire best-in-class performance very cost effectively, thereby providing the highest ROI possible of any alternate solution. We have SiGe BiCMOS process options at 0.35-, 0.18- and 0.13-micron. Although the process comes with many options like deep trench, ultra thick metal, deep N-Well, and MIM caps ranging from 1fF/um2 to 5.6fF/um2, the process is also available with a complimentary process allowing for a vertical PNP on NPN. These offerings achieve noise and power performance that is competitive with GaAs while offering as much as 40% lower die cost. Our RFCMOS offering is desirable for the most cost-sensitive RF devices. Our 0.18- and 0.13-micron CMOS options enable mixed-signal and digital functions on the same chip further reducing cost of the complete system. Our leadership SiGe BiCMOS and RFCMOS technology integrated with high-density CMOS provides the industry’s best cost and performance-optimized RF solution and meets our customers’ requirements for a fast and efficient RF design flow. |
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CMOS Image Sensor (CIS)Our advanced and proven CMOS image sensor technology is intended to meet the established growing demand for optical sensors used in consumer, industrial, medical and automotive applications. Our lengthy experience in the imaging field, combined with our own CMOS technology developed in-house, enables best-in-class customized designs. Our skilled experts support the customization of pixels per project needs and our superior performance (dark current, low noise and dynamic range) enables a rich offering for various digital imaging applications. We have demonstrated leading CIS technology for high end cameras and we are a proven leader in X-ray CMOS image sensors with the largest market share. Our long-term R&D investment keeps us at the cutting edge. |
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High Performance AnalogTowerJazz is the industry's only pure play foundry with multi-fab SiGe BiCMOS capability for the manufacture of HPA products optimized for high-speed and low power devices for today's high-frequency networking and wireless communications. Our industry-leading SiGe BiCMOS process reaches switching speeds of greater than 200GHz and is ideal for automotive radar, mmwave components, TIAs, LD, CDRs, Femtocells/Picocells and Fiber Channel applications. To meet our customers' needs to deliver competitively differentiated products, we offer customizable design kits geared for high frequency devices. To minimize design spins, we leverage our design enablement and HPA application expertise for first-pass success. Our SiGe process utilizes state-of-the-art processing technology in order to drive high speed performance while providing an ideal platform for logic and analog integration. In addition, we offer a complimentary process with vertical PNPs on NPNs for ease of design for storage pre-amp and DSL applications. Offering MIM caps from 1fF/um2 to 5.6fF/um2, deep trench, and metal layer options from 3 to 6 layer metal, this process makes it easier for designers to optimize the process to their applications
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MPWWe realize that low cost and quick prototyping are essential elements for successful silicon production. Our MPW Shuttle Program enables customers to tape-out their designs for rapid prototyping and helps with costs by sharing the expense of masks and wafers with other shuttle program participants. Using the MPW program, the customer can design and verify a wide range of intellectual property, pre-production or prototype designs before committing to a full production mask set, all using our standard manufacturing process technologies. Our MPW program offers maximum flexibility while minimizing overall efforts. MPW shuttle features include:
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