RF CMOS BiCMOS SiGe

Our commercial SiGe BiCMOS and RFCMOS technologies enable many high speed consumer applications including cellular/front end PA and Switch modules, TV tuners, and radio transceivers in cell phone, WLAN, WiMAX and GPS devices. By utilizing our RF technology, our customers acquire best-in-class performance very cost effectively, thereby providing the highest ROI possible of any alternate solution. We have SiGe BiCMOS process options at 0.35-, 0.18- and 0.13-micron.  Although the process comes with many options like deep trench, ultra thick metal, deep N-Well, and MIM caps ranging from 1fF/um2 to 5.6fF/um2, the process is also available with a complimentary process allowing for a vertical PNP on NPN. These offerings achieve noise and power performance that is competitive with GaAs while offering as much as 40% lower die cost.  Our RFCMOS offering is desirable for the most cost-sensitive RF devices. Our 0.18- and 0.13-micron CMOS options enable mixed-signal and digital functions on the same chip further reducing cost of the complete system. Our leadership SiGe BiCMOS and RFCMOS technology integrated with high-density CMOS provides the industry’s best cost and performance-optimized RF solution and meets our customers’ requirements for a fast and efficient RF design flow. 

SiGe Platform Overview - 0.35μm, 0.18μm, 0.13μm Nodes